Broadband non-linear FET behavioral model defined in the admittance domain

Moure, M. Rocio, Fernandez-Barciela, Monica, Casbon, Michael A. ORCID: https://orcid.org/0000-0002-8637-9888 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2016. Broadband non-linear FET behavioral model defined in the admittance domain. Presented at: 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, 3-4 October 2016. 2016 11th European Microwave Integrated Circuits Conference (EuMIC 2016). Institute of Electrical and Electronics Engineers (IEEE), pp. 281-284. 10.1109/EuMIC.2016.7777545

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Abstract

In this paper a broadband non-linear behavioral model, defined in the admittance, Y-parameter, domain rather than the travelling waves, X-parameter, domain, applicable for FETs is presented. This work builds on previous work by incorporating a quadratic dependence of the Large Signal (LS) intrinsic Y-parameters real parts with frequency to extend its bandwidth. Such a model is able to predict large-signal transistor behavior, including the second harmonic, up to close to the device fT. The model has been extracted and validated on WIN GaN HEMT devices.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISBN:	978-2-87487-044-6
Last Modified:	02 Nov 2022 10:20
URI:	https://orca.cardiff.ac.uk/id/eprint/98297

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