Frequency-scalable nonlinear behavioral transistor model from single frequency X-parameters based on time-reversal transformation properties (INVITED)

Root, David E., Biernacki, Radoslaw M., Marcu, Mihai, Koh, Minghao and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2015. Frequency-scalable nonlinear behavioral transistor model from single frequency X-parameters based on time-reversal transformation properties (INVITED). Presented at: 2015 86th ARFTG Microwave Measurement Conference, 3-4 December 2015. Microwave Measurement Conference, 2015 86th ARFTG. IEEE, p. 1. 10.1109/ARFTG.2015.7381463

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Abstract

This paper presents a powerful new method that generates a frequency-scalable nonlinear simulation model from single-frequency large-signal transistor X-parameter data. The method is based on a novel orthogonal identification (direct extraction) of current source and charge source contributions to the spectrally rich port currents under large-signal conditions. Explicit decomposition formulae, applied entirely in the frequency domain, are derived in terms of sensitivity functions at pairs of large-signal operating points related to one-another by time-reversal transformation. The method is applied and validated with respect to data from a measurement-based model of a pHEMT transistor. It is demonstrated that the scalable model can predict the nonlinear performance of the transistor over several orders of magnitude in frequency, all from X-parameters at a single fundamental frequency.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Publisher:	IEEE
ISBN:	9781467392471
Last Modified:	21 Oct 2022 07:02
URI:	https://orca.cardiff.ac.uk/id/eprint/99002

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