Root, David E., Biernacki, Radoslaw M., Marcu, Mihai, Koh, Minghao and Tasker, Paul J. ![]() |
Abstract
This paper presents a powerful new method that generates a frequency-scalable nonlinear simulation model from single-frequency large-signal transistor X-parameter data. The method is based on a novel orthogonal identification (direct extraction) of current source and charge source contributions to the spectrally rich port currents under large-signal conditions. Explicit decomposition formulae, applied entirely in the frequency domain, are derived in terms of sensitivity functions at pairs of large-signal operating points related to one-another by time-reversal transformation. The method is applied and validated with respect to data from a measurement-based model of a pHEMT transistor. It is demonstrated that the scalable model can predict the nonlinear performance of the transistor over several orders of magnitude in frequency, all from X-parameters at a single fundamental frequency.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Publisher: | IEEE |
ISBN: | 9781467392471 |
Last Modified: | 21 Oct 2022 07:02 |
URI: | https://orca.cardiff.ac.uk/id/eprint/99002 |
Citation Data
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