Titova, Nadezhda, Kardakova, Anna I., Tovpeko, Nina, Ryabchun, Sergey, Mandal, Soumen ![]() ![]() ![]() ![]() |
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Abstract
We have measured the electron-phonon energy-relaxation time, τeph, in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τeph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Uncontrolled Keywords: | Superconducting boron-doped diamond, electron–phonon time, superconducting nanobolometers. |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
ISSN: | 1051-8223 |
Date of First Compliant Deposit: | 18 May 2017 |
Date of Acceptance: | 8 November 2016 |
Last Modified: | 05 May 2023 12:30 |
URI: | https://orca.cardiff.ac.uk/id/eprint/99459 |
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