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Effect of slurry composition on the chemical mechanical polishing of thin diamond films

Werrell, Jessica, Mandal, Soumen ORCID:, Thomas, Evan L. H., Brousseau, Emmanuel Bruno Jean Paul ORCID:, Lewis, Ryan, Borri, Paola ORCID:, Davies, Philip Rosser ORCID: and Williams, Oliver Aneurin ORCID: 2017. Effect of slurry composition on the chemical mechanical polishing of thin diamond films. Science and Technology of Advanced Materials 18 (1) , pp. 654-663. 10.1080/14686996.2017.1366815.

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Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition (CVD) have an intrinsic surface roughness, which hinders the development and per- formance of the films' various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The nal surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Biosciences
Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Publisher: National Institute for Materials Science with Taylor and Francis
ISSN: 1468-6996
Date of First Compliant Deposit: 11 August 2017
Date of Acceptance: 9 August 2017
Last Modified: 06 Jan 2024 02:36

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