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InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range

Fonseka, H. A., Ameruddin, A. S., Caroff-Gaonac'h, Philippe ORCID:, Tedeschi, D., De Luca, M., Mura, F., Guo, Y., Lysevych, M., Wang, F., Tan, H. H., Polimeni, A. and Jagadish, C. 2017. InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range. Nanoscale 9 (36) , pp. 13554-13562. 10.1039/C7NR04598K

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The usability and tunability of the essential InP–InGaAs material combination in nanowire-based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP–InGaAs–InP nanowire QWs are characterised using cross-section transmission electron microscopy and photoluminescence measurements. The InP–InGaAs direct interface is found to be sharp while the InGaAs–InP inverted interface is more diffused, in agreement with their planar counterpart. Bright emission is observed from the single nanowires containing the QWs at room temperature, with no emission from the InP core or outer barrier. The tunability of the QW emission wavelength in the 1.3–1.55 μm communication wavelength range is demonstrated by varying the QW thickness and in the 1.3 μm range by varying the composition. The experiments are supported by simulation of the emission wavelength of the wurtzite phase InP–InGaAs QWs in the thickness range considered. The radial heterostructure is further extended to design multiple QWs with bright emission, therefore establishing the capability of this material system for nanowire based optical devices for communication applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Royal Society of Chemistry
ISSN: 2040-3364
Date of First Compliant Deposit: 19 October 2017
Date of Acceptance: 15 August 2017
Last Modified: 13 Jul 2024 22:08

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