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Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing

Melikhov, Yevgen, Konstantynov, P., Domagala, J., Sadowski, J., Chernyshova, M., Wojciechowski, T., Syryanyy, Y. and Demchenko, I. 2016. Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing. Journal of Physics: Conference Series 712 (1) , 012114. 10.1088/1742-6596/712/1/012114

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The redistribution of Mn atoms in Ga1-xMnxAs layer during medium-temperature annealing, 250-450 oC, by Mn K-edge X-ray absorption fine structure (XAFS) recorded at ALBA facility, was studied. For this purpose Ga1-xMnxAs thin layer with x=0.01 was grown on AlAs buffer layer deposited on GaAs(100) substrate by molecular beam epitaxy (MBE) followed by annealing. The examined layer was detached from the substrate using a “lift-off” procedure in order to eliminate elastic scattering in XAFS spectra. Fourier transform analysis of experimentally obtained EXAFS spectra allowed to propose a model which describes a redistribution/diffusion of Mn atoms in the host matrix. Theoretical XANES spectra, simulated using multiple scattering formalism (FEFF code) with the support of density functional theory (WIEN2k code), qualitatively describe the features observed in the experimental fine structure.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: Q Science > QC Physics
Publisher: IOP Publishing
ISSN: 1742-6596
Date of First Compliant Deposit: 17 November 2017
Last Modified: 20 Oct 2019 12:04

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