Redox agent enhanced chemical mechanical polishing of thin film diamond

Mandal, Soumen ORCID: https://orcid.org/0000-0001-8912-1439, Thomas, Evan L. H., Gines, Laia ORCID: https://orcid.org/0000-0001-9980-054X, Morgan, David ORCID: https://orcid.org/0000-0002-6571-5731, Green, Joshua, Brousseau, Emmanuel B. ORCID: https://orcid.org/0000-0003-2728-3189 and Williams, Oliver A. ORCID: https://orcid.org/0000-0002-7210-3004 2018. Redox agent enhanced chemical mechanical polishing of thin film diamond. Carbon 130 , pp. 25-30. 10.1016/j.carbon.2017.12.077

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Abstract

The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to the alkaline SF1 polishing slurry. Three oxidizing agents namely, hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on the polished samples using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerates the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Chemistry Engineering Physics and Astronomy Cardiff Catalysis Institute (CCI)
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0008-6223
Date of First Compliant Deposit:	3 January 2018
Date of Acceptance:	18 December 2017
Last Modified:	12 Feb 2024 17:00
URI:	https://orca.cardiff.ac.uk/id/eprint/107857

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