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Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements

Roff, Chris, McGovern, Peter, Benedikt, Johannes, Tasker, Paul, Balmer, R.S., Wallis, D.J., Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M.J. and Martin, T. 2007. Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements. Presented at: 1st European Microwave Integrated Circuits Conference, Manchester, UK, 10-13 Sept 2006. 2006 European Microwave Integrated Circuits Conference. IEEE, p. 43. 10.1109/EMICC.2006.282745

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Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 2960055187
Last Modified: 28 Oct 2019 22:02

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