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Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements

Roff, Chris, McGovern, Peter, Benedikt, Johannes ORCID:, Tasker, Paul ORCID:, Balmer, R.S., Wallis, D.J., Hilton, K.P., Maclean, J.O., Hayes, D.G., Uren, M.J. and Martin, T. 2007. Detailed analysis of DC-RF dispersion in AlGaN/GaN HFETs using waveform measurements. Presented at: 1st European Microwave Integrated Circuits Conference, Manchester, UK, 10-13 Sept 2006. 2006 European Microwave Integrated Circuits Conference. IEEE, p. 43. 10.1109/EMICC.2006.282745

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Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 2960055187
Last Modified: 22 Nov 2022 09:23

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