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An ultra-low-power MMIC amplifier using 50-nm $\delta$ -doped $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ metamorphic HEMT

Hwang, Chi-Jeon, Lok, L.B., Chong, Harold M H, Holland, Martin, Thayne, Iain G and Elgaid, Khaled ORCID: 2010. An ultra-low-power MMIC amplifier using 50-nm $\delta$ -doped $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ metamorphic HEMT. IEEE Electron Device Letters 31 (11) , pp. 1230-1232. 10.1109/LED.2010.2070484

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An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double (5-doped In0.52Al0.48As/In0.53Ga0.47As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, ±0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP3 (IIP3) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Last Modified: 23 Oct 2022 13:03

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