Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications

Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097, Zhou, H., Wilkinson, C.D.W. and Thayne, I.G. 2004. Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering 73-74 , pp. 452-455. 10.1016/S0167-9317(04)00191-1

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Abstract

In this work, a novel, high quality, high-density, deposited at room temperature ultra thin 5 nm Si3N4 metal insulator metal (MIM) capacitor process for monolithic millimetre-wave integrated circuit (MMMIC) applications is demonstrated. This process is developed using inductively coupled plasma enhanced chemical vapor deposition technique (ICP-CVD). Capacitance of 6.7 fF/μm2 and a breakdown electric field of more than 3 × 106 V cm−1 were achieved. RF characterisation and equivalent circuits models were extracted which showed an increase in capacitance per area by more than 13-fold and reduction in RF loss as silicon nitride thickness reduced from 120 to 5 nm. Comparison with high temperature conventional 300 °C PECVD Si3N4 showed comparable breakdown voltage and leakage current.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Elsevier
ISSN:	0167-9317
Last Modified:	23 Oct 2022 13:03
URI:	https://orca.cardiff.ac.uk/id/eprint/109541

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