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1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

Li, Qiang, Wan, Yating, Liu, Alan Y., Gossard, Arthur C., Bowers, John E., Hu, Evelyn L. and Lau, Kei May 2016. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express 24 (18) , pp. 21038-21045. 10.1364/OE.24.021038

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Abstract

We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 1094-4087
Date of First Compliant Deposit: 25 May 2018
Date of Acceptance: 21 August 2016
Last Modified: 23 May 2019 14:57
URI: https://orca.cardiff.ac.uk/id/eprint/111770

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