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Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films

Li, Weiwei, Gu, Junxing, He, Qian ORCID:, Zhang, Kelvin H. L., Wang, Chunchang, Jin, Kuijuan, Wang, Yongqiang, Acosta, Matias, Wang, Haiyan, Borisevich, Albina Y., MacManus-Driscoll, Judith L. and Yang, Hao 2018. Oxygen-vacancy-mediated dielectric property in perovskite Eu0.5Ba0.5TiO3-δ epitaxial thin films. Applied Physics Letters 112 (18) , 182906. 10.1063/1.5025607

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Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Chemistry
Cardiff Catalysis Institute (CCI)
Publisher: AIP Publishing
ISSN: 0003-6951
Date of First Compliant Deposit: 29 May 2018
Date of Acceptance: 20 April 2018
Last Modified: 03 May 2023 20:56

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