Li, Weiwei, Gu, Junxing, He, Qian ![]() |
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Abstract
Dielectric relaxation in ABO3 perovskite oxides can result from many different charge carrier-related phenomena. Despite a strong understanding of dielectric relaxations, a detailed investigation of the relationship between the content of oxygen vacancies (VO) and dielectric relaxation has not been performed in perovskite oxide films. In this work, we report a systematic investigation of the influence of the VO concentration on the dielectric relaxation of Eu0.5Ba0.5TiO3-δ epitaxial thin films. Nuclear resonance backscattering spectrometry was used to directly measure the oxygen concentration in Eu0.5Ba0.5TiO3-δ films. We found that dipolar defects created by VO interact with the off-centered Ti ions, which results in the dielectric relaxation in Eu0.5Ba0.5TiO3-δ films. Activation energy gradually increases with the increasing content of VO. The present work significantly extends our understanding of relaxation properties in oxide films.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Chemistry Cardiff Catalysis Institute (CCI) |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
Date of First Compliant Deposit: | 29 May 2018 |
Date of Acceptance: | 20 April 2018 |
Last Modified: | 03 May 2023 20:56 |
URI: | https://orca.cardiff.ac.uk/id/eprint/111833 |
Citation Data
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