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Monolithic integration of tunnel diode based inverters on exact (001) Si substrates

Han, Yu, Li, Qiang and Lau, Kei May 2016. Monolithic integration of tunnel diode based inverters on exact (001) Si substrates. IEEE Electron Device Letters 37 (6) , pp. 717-720. 10.1109/LED.2016.2552219

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Abstract

Monolithic integration of tunnel diode-based inverters on exact (001) Si substrates for the future high-speed, low-power, and compact digital circuits is demonstrated. A two-state inverter was fabricated using a forward biased fin-array tunnel diode as drive and a reverse-biased counterpart as load. On-chip operation and reduced fabrication complexity were achieved by exploiting the resistive characteristic of the reverse-biased tunnel diodes and the pre-defined patterns on the Si substrate

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 11 June 2018
Date of Acceptance: 6 April 2016
Last Modified: 12 Jun 2018 16:57
URI: https://orca.cardiff.ac.uk/id/eprint/112083

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