Monolithic integration of tunnel diode based inverters on exact (001) Si substrates

Han, Yu, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2016. Monolithic integration of tunnel diode based inverters on exact (001) Si substrates. IEEE Electron Device Letters 37 (6) , pp. 717-720. 10.1109/LED.2016.2552219

Preview

PDF - Submitted Pre-Print Version Download (704kB) | Preview

Abstract

Monolithic integration of tunnel diode-based inverters on exact (001) Si substrates for the future high-speed, low-power, and compact digital circuits is demonstrated. A two-state inverter was fabricated using a forward biased fin-array tunnel diode as drive and a reverse-biased counterpart as load. On-chip operation and reduced fabrication complexity were achieved by exploiting the resistive characteristic of the reverse-biased tunnel diodes and the pre-defined patterns on the Si substrate

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0741-3106
Date of First Compliant Deposit:	11 June 2018
Date of Acceptance:	6 April 2016
Last Modified:	21 Nov 2024 10:15
URI:	https://orca.cardiff.ac.uk/id/eprint/112083

Citation Data

Cited 4 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item