Han, Yu, Li, Qiang ![]() |
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Official URL: http://dx.doi.org/10.1109/LED.2016.2552219
Abstract
Monolithic integration of tunnel diode-based inverters on exact (001) Si substrates for the future high-speed, low-power, and compact digital circuits is demonstrated. A two-state inverter was fabricated using a forward biased fin-array tunnel diode as drive and a reverse-biased counterpart as load. On-chip operation and reduced fabrication complexity were achieved by exploiting the resistive characteristic of the reverse-biased tunnel diodes and the pre-defined patterns on the Si substrate
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
ISSN: | 0741-3106 |
Date of First Compliant Deposit: | 11 June 2018 |
Date of Acceptance: | 6 April 2016 |
Last Modified: | 08 Nov 2023 09:17 |
URI: | https://orca.cardiff.ac.uk/id/eprint/112083 |
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