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Monolithic integration of tunnel diode based inverters on exact (001) Si substrates

Han, Yu, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2016. Monolithic integration of tunnel diode based inverters on exact (001) Si substrates. IEEE Electron Device Letters 37 (6) , pp. 717-720. 10.1109/LED.2016.2552219

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Abstract

Monolithic integration of tunnel diode-based inverters on exact (001) Si substrates for the future high-speed, low-power, and compact digital circuits is demonstrated. A two-state inverter was fabricated using a forward biased fin-array tunnel diode as drive and a reverse-biased counterpart as load. On-chip operation and reduced fabrication complexity were achieved by exploiting the resistive characteristic of the reverse-biased tunnel diodes and the pre-defined patterns on the Si substrate

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 11 June 2018
Date of Acceptance: 6 April 2016
Last Modified: 24 Oct 2022 02:23
URI: https://orca.cardiff.ac.uk/id/eprint/112083

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