Camarchia, Vittorio, Quaglia, Roberto ![]() |
Official URL: http://dx.doi.org/10.1109/INMMIC.2017.7927311
Abstract
This paper presents three power amplifiers designed for 15 GHz microwave radio application employing GaN 0.25 μm technology. The first design is a 3W combined power amplifier, the second is a 7-15 GHz dual-band 3 W combined power amplifier, and the third is a 4W Doherty power amplifier. Advantages and limitations of GaN 0.25 μm technology applied to the three different design solutions for this specific application are discussed, presenting and comparing the measurement results obtained on the developed amplifiers.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 978-1-5090-5862-4 |
Last Modified: | 23 Oct 2022 13:59 |
URI: | https://orca.cardiff.ac.uk/id/eprint/112467 |
Citation Data
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