Quaglia, Roberto ![]() |
Abstract
This paper presents the design and characterization of a Doherty power amplifier for small cells applications in the 1.7-2.7 GHz band. A quasi-monolithic realization is chosen for its cost advantages when compared to a fully-monolithic solution, and relies on GaN HEMT active devices, but passive networks realized on GaAs substrate. A lumped element Doherty combiner is designed to maximize the bandwidth at which the power amplifier shows high back-off efficiency that results higher than 37% in the 1.7-2.7 GHz band. The dual-input topology permits high flexibility in the optimization of performance, in particular in terms of bandwidth. The fabricated Doherty favourably compares to previously published power amplifiers.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 978-1-5090-6360-4 |
Last Modified: | 24 Oct 2022 07:12 |
URI: | https://orca.cardiff.ac.uk/id/eprint/114328 |
Citation Data
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