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Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon

Liao, Mengya, Chen, Siming, Liu, Zhixin, Wang, Yi, Ponnampalam, Lalitha, Wu, Jiang, Tang, Mingchu, Shutts, Samuel ORCID:, Liu, Zizhuo, Smowton, Peter ORCID:, Yu, Siyuan, Seeds, Alwyn and Liu, Huiyun 2018. Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photonics Research 6 (11) , pp. 1062-1066. 10.1364/PRJ.6.001062

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We report low-noise, high-performance single transverse mode 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on silicon (Si) using molecular beam epitaxy. The fabricated narrow-ridge-waveguide Fabry–Perot (FP) lasers have achieved a room-temperature continuous-wave (CW) threshold current of 12.5 mA and high CW temperature tolerance up to 90°C. An ultra-low relative intensity noise of less than −150  dB/Hz is measured in the 4–16 GHz range. Using this low-noise Si-based laser, we then demonstrate 25.6 Gb/s data transmission over 13.5 km SMF-28. These low-cost FP laser devices are promising candidates to provide cost-effective solutions for use in uncooled Si photonics transmitters in inter/hyper data centers and metropolitan data links.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 2327-9125
Date of First Compliant Deposit: 26 September 2018
Date of Acceptance: 13 September 2018
Last Modified: 05 May 2023 18:10

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