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Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

Norman, Justin, Kennedy, M. J., Selvidge, Jennifer, Li, Qiang, Wan, Yating, Liu, Alan Y., Callahan, Patrick G., Echlin, McLean P., Pollock, Tresa M., Lau, Kei May, Gossard, Arthur C. and Bowers, John E. 2017. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express 25 (4) , pp. 3927-3934. 10.1364/OE.25.003927

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Abstract

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Additional Information: Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
Publisher: Optical Society of America
ISSN: 1094-4087
Date of First Compliant Deposit: 5 October 2018
Date of Acceptance: 9 February 2017
Last Modified: 08 Oct 2018 10:45
URI: https://orca.cardiff.ac.uk/id/eprint/115580

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