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III-V Superlattices on InP/Si metamorphic buffer Layers for λ≈4.8 μm quantum cascade lasers

Rajeev, Ayushi, Shi, Bei, Li, Qiang ORCID:, Kirch, Jeremy D., Cheng, Micah, Tan, Aaron, Kim, Honghyuk, Oresick, Kevin, Sigler, Chris, Lau, Kei M., Kuech, Thomas F. and Mawst, Luke J. 2019. III-V Superlattices on InP/Si metamorphic buffer Layers for λ≈4.8 μm quantum cascade lasers. physica status solidi (a) 216 (1) , 1800493. 10.1002/pssa.201800493

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Metalorganic chemical vapor deposition (MOCVD) growth of InP‐based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a strain‐compensated 11.98 nm In0.365Al0.635As/14.8 nm In0.64Ga0.36As superlattice (SL) structure as well as 5‐stages of the λ ≈ 4.8 µm QCL active region, which are grown atop the metamorphic buffer and are used to assess the structural properties of the SL through high‐resolution X‐ray diffraction and high‐resolution transmission electron microscopy. Full QCL structures with 40‐stage active region are fabricated into edge‐emitting ridge‐waveguide structures and demonstrate low temperature electroluminescence with a FWHM of 48.6 meV.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Wiley
ISSN: 1862-6300
Date of First Compliant Deposit: 17 October 2018
Date of Acceptance: 10 October 2018
Last Modified: 24 Oct 2022 07:48

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