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Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure

Abadia, Nicolas ORCID:, Dai, Xiangyang, Lu, Qiaoyin, Guo, Wei-Hua, Patel, David, Plant, David V. and Donegan, John F. 2017. Highly fabrication tolerant InP based polarization beam splitter based on p-i-n structure. Optics Express 25 (9) , pp. 10070-10077. 10.1364/OE.25.010070

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In this work, a novel highly fabrication tolerant polarization beam splitter (PBS) is presented on an InP platform. To achieve the splitting, we combine the Pockels effect and the plasma dispersion effect in a symmetric 1x2 Mach-Zehnder interferometer (MZI). One p-i-n phase shifter of the MZI is driven in forward bias to exploit the plasma dispersion effect and modify the phase of both the TE and TM mode. The other arm of the MZI is driven in reverse bias to exploit the Pockels effect which affects only the TE mode. By adjusting the voltages of the two phase shifters, a different interference condition can be set for the TE and the TM modes thereby splitting them at the output of the MZI. By adjusting the voltages, the very tight fabrication tolerances known for fully passive PBS are eased. The experimental results show that an extinction ratio better than 15 dB and an on-chip loss of 3.5 dB over the full C-band (1530-1565nm) are achieved.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 1094-4087
Date of First Compliant Deposit: 13 November 2018
Date of Acceptance: 9 April 2017
Last Modified: 02 May 2023 22:25

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