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Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates

Chandrasekar, Hareesh, Uren, Michael J., Eblabla, Abdalla ORCID:, Hirshy, Hassan ORCID:, Casbon, Michael A. ORCID:, Tasker, Paul J. ORCID:, Elgaid, Khaled ORCID: and Kuball, Martin 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39 (10) , pp. 1556-1559. 10.1109/LED.2018.2864562

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We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for static operation and can cause significant back-gate-induced current collapse. Substrate ramp characterization of the buffer shows good agreement with device simulations and indicates that the current collapse is caused by charge-redistribution within the GaN layer. Potential solutions, which alter charge storage and leakage in the epitaxy to counter this effect, are then presented.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Additional Information: This work is licensed under a Creative Commons Attribution 3.0 License
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 20 November 2018
Date of Acceptance: 6 August 2018
Last Modified: 05 May 2023 13:24

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