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Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates

Chandrasekar, Hareesh, Uren, Michael J., Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Hirshy, Hassan ORCID: https://orcid.org/0000-0003-0281-3681, Casbon, Michael A. ORCID: https://orcid.org/0000-0002-8637-9888, Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830, Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 and Kuball, Martin 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39 (10) , pp. 1556-1559. 10.1109/LED.2018.2864562

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Abstract

We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for static operation and can cause significant back-gate-induced current collapse. Substrate ramp characterization of the buffer shows good agreement with device simulations and indicates that the current collapse is caused by charge-redistribution within the GaN layer. Potential solutions, which alter charge storage and leakage in the epitaxy to counter this effect, are then presented.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Additional Information: This work is licensed under a Creative Commons Attribution 3.0 License
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 20 November 2018
Date of Acceptance: 6 August 2018
Last Modified: 24 Oct 2022 08:08
URI: https://orca.cardiff.ac.uk/id/eprint/116955

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