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Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates

Chandrasekar, Hareesh, Uren, Michael J., Eblabla, Abdalla, Hirshy, Hassan, Casbon, Michael A., Tasker, Paul J., Elgaid, Khaled and Kuball, Martin 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39 (10) , pp. 1556-1559. 10.1109/LED.2018.2864562

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We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for static operation and can cause significant back-gate-induced current collapse. Substrate ramp characterization of the buffer shows good agreement with device simulations and indicates that the current collapse is caused by charge-redistribution within the GaN layer. Potential solutions, which alter charge storage and leakage in the epitaxy to counter this effect, are then presented.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Additional Information: This work is licensed under a Creative Commons Attribution 3.0 License
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 20 November 2018
Date of Acceptance: 6 August 2018
Last Modified: 24 Apr 2022 15:32

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