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Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator

Han, Yu, Ng, Wai, Xue, Ying, Li, Qiang ORCID:, Wong, Kam Sing and Lau, Kei May 2019. Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. Optics Letters 44 (4) , pp. 767-770. 10.1364/OL.44.000767

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A compact, efficient, and monolithically grown III–V laser source provides an attractive alternative to bonding off-chip lasers for Si photonics research. Although recent demonstrations of microlasers on (001) Si wafers using thick metamorphic buffers are encouraging, scaling down the laser footprint to nanoscale and operating the nanolasers at telecom wavelengths remain significant challenges. Here, we report a monolithically integrated in-plane InP/InGaAs nanolaser array on (001) silicon-on-insulator (SOI) platforms with emission wavelengths covering the entire C band (1.55 μm). Multiple InGaAs quantum wells are embedded in high-quality InP nanoridges by selective-area growth on patterned (001) SOI. Combined with air-cladded InP/Si optical cavities, room-temperature operation at multiple telecom bands is obtained by defining different cavity lengths with lithography. The demonstration of telecom-wavelength monolithic nanolasers on (001) SOI platforms presents an important step towards fully integrated Si photonics circuits.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Optometry and Vision Sciences
Physics and Astronomy
Publisher: Optical Society of America
ISSN: 0146-9592
Date of First Compliant Deposit: 5 March 2019
Date of Acceptance: 7 January 2019
Last Modified: 07 Nov 2023 03:53

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