A 1.8-3.2 GHz Doherty Power Amplifier in quasi-MMIC Technology

Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Greene, Mark D., Poulton, Matthew J. and Cripps, Steve C. ORCID: https://orcid.org/0000-0002-2258-951X 2019. A 1.8-3.2 GHz Doherty Power Amplifier in quasi-MMIC Technology. IEEE Microwave and Wireless Components Letters 29 (5) , pp. 345-347. 10.1109/LMWC.2019.2904883

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Abstract

This letter presents the design and characterization of a quasi-integrated Doherty power amplifier for base-station applications. The prototype is based on GaN on SiC 0.25-μm 50-V transistors, whereas the passive matching networks are realized on a GaAs substrate. The design, based on a dual-input Doherty architecture, achieves a continuous-wave (CW) output power higher than 42 dBm and a backoff efficiency higher than 38% over the 1.8-3.2-GHz frequency band. By using an off-chip coupler, a single-input operation is also possible with a slight reduction in performance, i.e., CW output power and backoff efficiency higher than 41.4 dBm and 36%, respectively, on the 1.8-3.2-GHz band. System-level characterization shows higher peak power achievable than in CW condition as well as the linearizability of the amplifier under modulated signal conditions.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institution of Engineering and Technology
ISSN:	1531-1309
Date of First Compliant Deposit:	11 March 2019
Date of Acceptance:	7 March 2019
Last Modified:	30 Nov 2024 05:15
URI:	https://orca.cardiff.ac.uk/id/eprint/120554

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