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Lattice strain causes non-radiative losses in halide perovskites

Jones, Timothy W., Osherov, Anna, Alsari, Mejd, Sponseller, Melany, Duck, Benjamin C., Jung, Young-Kwang, Settens, Charles, Niroui, Farnaz, Brenes, Roberto, Stan, Camelia V., Li, Yao, Abdi-Jalebi, Mojtaba, Tamura, Nobumichi, Macdonald, J. Emyr ORCID:, Burghammer, Manfred, Friend, Richard H., Bulovic, Vladimir, Walsh, Aron, Wilson, Gregory J., Lilliu, Samuele and Stranks, Samuel D. 2019. Lattice strain causes non-radiative losses in halide perovskites. Energy and Environmental Science 12 (2) , pp. 596-606. 10.1039/C8EE02751J

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Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. However, the origin of the variations remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. Through a multi-scale investigation – combining correlative synchrotron scanning X-ray diffraction and time-resolved photoluminescence measurements on the same scan area – we reveal that lattice strain is directly associated with enhanced defect concentrations and non-radiative recombination. The strain patterns have a complex heterogeneity across multiple length scales. We propose that strain arises during the film growth and crystallization and provides a driving force for defect formation. Our work sheds new light on the presence and influence of structural defects in halide perovskites, revealing new pathways to manage defects and eliminate losses.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Additional Information: This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
Publisher: Royal Society of Chemistry
ISSN: 1754-5692
Date of First Compliant Deposit: 21 March 2019
Date of Acceptance: 15 January 2019
Last Modified: 05 May 2023 12:33

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