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Defect characterization of InAs/InGaAs quantum dot p-i-n photodetector grown on GaAs-on-V-grooved-Si substrate

Huang, Jian, Wan, Yating, Jung, Daehwan, Norman, Justin, Shang, Chen, Li, Qiang ORCID:, Lau, Kei May, Gossard, Arthur C., Bowers, John E. and Chen, Baile 2019. Defect characterization of InAs/InGaAs quantum dot p-i-n photodetector grown on GaAs-on-V-grooved-Si substrate. ACS Photonics 6 (5) , pp. 1100-1105. 10.1021/acsphotonics.8b01707

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The performance of semiconductor devices on silicon can be severely degraded by the presence of dislocations incurred during heteroepitaxial growth. Here, the physics of the defect mechanisms, characterization of epitaxial structures, and device properties of waveguide photodetectors (PDs) epitaxially grown on (001) Si are presented. A special GaAs-on-V-grooved-Si template was prepared by combining the aspect ratio trapping effects, superlattice cyclic, and strain-balancing layer stacks. A high quality of buffer structure was characterized by atomic force microscopy (AFM) and electron channeling contrast imaging (ECCI) results. An ultralow dark current density of 3.5 × 10–7A/cm2 at 300 K was measured under −1 V. That is 40× smaller than the best reported value of epitaxially grown InAs/GaAs quantum dot photodetector structure on GaP/Si substrate. Low frequency noise spectroscopy was used to characterize the generation and recombination related deep levels. A trap with an activation energy of 0.4 eV was identified, which is near the middle bandgap. With low frequency noise spectroscopy along with the current–voltage and capacitance–voltage characterizations, the recombination lifetime of 27 μs and trap density of 5.4 × 1012 cm–3 were estimated.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 2330-4022
Date of First Compliant Deposit: 7 May 2019
Date of Acceptance: 23 April 2019
Last Modified: 07 Nov 2023 00:27

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