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A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use

Cameron, N.I., Taylor, M.R.S., McLelland, H., Holland, M., Thayne, I.G., Elgaid, K. ORCID: and Beaumont, S.P. 2002. A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use. Presented at: 1995 IEEE MTT-S International Microwave Symposium, Orlando, Florida, USA, 16-20 May 1995. Proceedings of 1995 IEEE MTT-S International Microwave Symposium. IEEE, p. 438. 10.1109/MWSYM.1995.405952

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A GaAs pseudomorphic HEMT process has been optimised for high performance and yield at W-band. Several key nano-fabrication techniques are explored for performance, manufacturability and process sensitivity. The molecular beam epitaxially grown pHEMT layer is optimised for reduced short channel effects, high transconductance (690 mS/mm) and reliability. Electron-beam lithography produces ultra short T-gates with high reproducibility. Selective reactive ion etching enables both the depth and width of the gate recess to be accurately controlled. 0.2 /spl mu/m pHEMTs with two 50 /spl mu/m gate fingers exhibit average values for f/sub T/ and f/sub max/ of 121 and 157 GHz with low standard deviations of 4.6 and 2.9 GHz respectively.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: IEEE
Last Modified: 04 Nov 2022 12:18

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