III-V lasers emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited)

Han, Yu, Zhu, Si, Shi, Bei, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2019. III-V lasers emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited). Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019. Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing, 10.1364/CLEO_SI.2019.STh3N.5

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Abstract

We report the growth of quantum-well and quantum-dot lasers on compliant InP/Si substrates by MOCVD. Laser characteristics at 1.3 to 1.5 µm from whispering-gallery-mode (WGM) micro-lasers, nano-ridge lasers and conventional Fabry-Perot lasers will be described.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Physics and Astronomy
Additional Information:	paper STh3N.5.
Publisher:	OSA Publishing
ISBN:	978-1-943580-57-6
Last Modified:	04 Nov 2022 12:19
URI:	https://orca.cardiff.ac.uk/id/eprint/122598

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