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III-V lasers emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited)

Han, Yu, Zhu, Si, Shi, Bei, Li, Qiang and Lau, Kei May 2019. III-V lasers emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited). Presented at: CLEO: Science and Innovations 2019, San Jose, California, USA, 5–10 May 2019. Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2019). OSA Publishing, 10.1364/CLEO_SI.2019.STh3N.5

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Abstract

We report the growth of quantum-well and quantum-dot lasers on compliant InP/Si substrates by MOCVD. Laser characteristics at 1.3 to 1.5 µm from whispering-gallery-mode (WGM) micro-lasers, nano-ridge lasers and conventional Fabry-Perot lasers will be described.

Item Type: Conference or Workshop Item (Paper)
Status: Published
Schools: Physics and Astronomy
Additional Information: paper STh3N.5.
Publisher: OSA Publishing
ISBN: 978-1-943580-57-6
Last Modified: 17 May 2019 14:00
URI: https://orca.cardiff.ac.uk/id/eprint/122598

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