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Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si

Shang, Chen, Wan, Yating, Norman, Justin, Collins, Noelle, MacFarlane, Ian, Dumont, Mario, Liu, Songtao, Li, Qiang ORCID:, Lau, Kei May, Gossard, Arthur and Bowers, John E. 2019. Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1502207. 10.1109/JSTQE.2019.2927581

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A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm 2 , a maximum operating temperature of 80 °C, and a maximum 3 dB bandwidth of 5.8 GHz was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7×10 7 to 3×10 6 cm −2 ), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 22 July 2019
Date of Acceptance: 9 July 2019
Last Modified: 06 Nov 2023 15:17

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