Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si

Shang, Chen, Wan, Yating, Norman, Justin, Collins, Noelle, MacFarlane, Ian, Dumont, Mario, Liu, Songtao, Li, Qiang, Lau, Kei May, Gossard, Arthur and Bowers, John E. 2019. Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1502207. 10.1109/JSTQE.2019.2927581

[thumbnail of JSTQE-Chen-FP laser on GoVS-cleanversion.pdf]
PDF - Accepted Post-Print Version
Download (1MB) | Preview


A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm 2 , a maximum operating temperature of 80 °C, and a maximum 3 dB bandwidth of 5.8 GHz was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7×10 7 to 3×10 6 cm −2 ), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 22 July 2019
Date of Acceptance: 9 July 2019
Last Modified: 18 Oct 2019 17:03

Citation Data

Cited 18 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item


Downloads per month over past year

View more statistics