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Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si

Shang, Chen, Wan, Yating, Norman, Justin, Collins, Noelle, MacFarlane, Ian, Dumont, Mario, Liu, Songtao, Li, Qiang, Lau, Kei May, Gossard, Arthur and Bowers, John E. 2019. Low-threshold epitaxially grown 1.3 μm InAs quantum dot lasers on patterned (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1502207. 10.1109/JSTQE.2019.2927581

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Abstract

A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm 2 , a maximum operating temperature of 80 °C, and a maximum 3 dB bandwidth of 5.8 GHz was achieved for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7×10 7 to 3×10 6 cm −2 ), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 22 July 2019
Date of Acceptance: 9 July 2019
Last Modified: 18 Oct 2019 17:03
URI: https://orca.cardiff.ac.uk/id/eprint/124362

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