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Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE

Kim, H., Shi, B., Lingley, Z., Li, Q. ORCID: https://orcid.org/0000-0002-5257-7704, Rajeev, A., Brodie, M., Lau, K. M., Kuech, T. F., Sin, Y. and Mawst, L. J. 2019. Electrically injected 164µm emitting In065Ga035As 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express 27 (23) , pp. 33205-33216. 10.1364/OE.27.033205

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Abstract

We report the characteristics of the strained In0.65Ga0.35As triple quantum well (QW) diode lasers grown by metalorganic vapor phase epitaxy (MOVPE) on lattice-mismatched substrates such as GaAs or Si, by utilizing InP metamorphic buffer layers (MBLs) in conjunction with InAs nanostructure-based dislocation filters. As the lattice-mismatch between the substrate and InP MBL increases, higher threshold current densities and lower slope efficiencies were observed, together with higher temperature sensitivities for the threshold current and slope efficiency. Structural analysis performed by both high-resolution X-ray diffraction (HR-XRD) and transmission electron microscopy indicates graded and/or rougher QW interfaces within the active region grown on the mismatched substrate, which accounts for the observed devices characteristics.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 1094-4087
Date of First Compliant Deposit: 1 November 2019
Date of Acceptance: 17 October 2019
Last Modified: 26 Oct 2022 08:03
URI: https://orca.cardiff.ac.uk/id/eprint/126496

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