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Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si

Wan, Yating, Bowers, John E., Shang, Chen, Norman, Justin, Shi, Bei, Li, Qiang ORCID:, Collins, Noelle, Dumont, Mario, Lau, Kei May and Gossard, Arthur 2020. Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 26 , 1900409. 10.1109/JSTQE.2020.2964381

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We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of ${3\times 10^{7} {\rm{cm^{-2}}}}$ . Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 9 January 2020
Date of Acceptance: 6 January 2020
Last Modified: 05 May 2023 19:00

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