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Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si

Wan, Yating, Bowers, John E., Shang, Chen, Norman, Justin, Shi, Bei, Li, Qiang, Collins, Noelle, Dumont, Mario, Lau, Kei May and Gossard, Arthur 2020. Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si. IEEE Journal of Selected Topics in Quantum Electronics 26 , 1900409. 10.1109/JSTQE.2020.2964381

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We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of ${3\times 10^{7} {\rm{cm^{-2}}}}$ . Room-temperature cw lasing at ∼1.3 μm has been achieved, with a minimum threshold current density of 34.6 A/cm2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1077-260X
Date of First Compliant Deposit: 9 January 2020
Date of Acceptance: 6 January 2020
Last Modified: 25 Mar 2020 12:01

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