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GaN-on-diamond technology platform: bonding-free membrane manufacturing process

Smith, Matthew D., Cuenca, Jerome A. ORCID:, Field, Daniel E., Fu, Yen-chun, Yuan, Chao, Massabuau, Fabien, Mandal, Soumen ORCID:, Pomeroy, James W., Oliver, Rachel A., Uren, Michael J., Elgaid, Khaled ORCID:, Williams, Oliver A. ORCID:, Thayne, Iain and Kuball, Martin 2020. GaN-on-diamond technology platform: bonding-free membrane manufacturing process. AIP Advances 10 (3) , 035306. 10.1063/1.5129229

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GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: American Institute of Physics (AIP)
ISSN: 2158-3226
Date of First Compliant Deposit: 2 April 2020
Date of Acceptance: 10 February 2020
Last Modified: 29 Aug 2023 21:37

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