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Faraday-cage-assisted etching of suspended gallium nitride nanostructures

Gough, Geraint P., Sobiesierski, Angela D., Shabbir, Saleem, Thomas, Stuart, Beggs, Daryl M. ORCID:, Taylor, Robert A. and Bennett, Anthony J. ORCID: 2020. Faraday-cage-assisted etching of suspended gallium nitride nanostructures. AIP Advances 10 (5) , 055319. 10.1063/5.0007947

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We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Institute of Physics (AIP)
ISSN: 2158-3226
Funders: EPSRC
Date of First Compliant Deposit: 14 May 2020
Date of Acceptance: 28 April 2020
Last Modified: 08 May 2023 10:23

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