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Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substrates

Anyebe, E. A. ORCID: and Zhuang, Q. 2014. Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substrates. Materials Research Bulletin 60 , pp. 572-575. 10.1016/j.materresbull.2014.09.028

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We report the self-catalysed growth of InAs1-xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1-xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1-xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs1-xSbx nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs1-xSbx nanowires with the well-established Si platform.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Elsevier
ISSN: 0025-5408
Date of Acceptance: 10 September 2014
Last Modified: 07 Nov 2022 10:29

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