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Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

Zhuang, Qian D, Anyebe, Ezekiel A ORCID:, Sanchez, Ana M, Rajpalke, Mohana K, Veal, Tim D, Zhukov, Alexander, Robinson, Benjamin J, Anderson, Frazer, Kolosov, Oleg and Fal?ko, Vladimir 2014. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters 9 (1) , 321. 10.1186/1556-276X-9-321

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We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter along their entire length. In comparison with conventional InAs NWs grown on Si (111), the graphite surface led to significant effects on the NWs geometry grown on it, i.e. larger diameter, shorter length with lower number density, which were ascribed to the absence of dangling bonds on the graphite surface. The axial growth rate of the NWs has a strong dependence on growth time, which increases quickly in the beginning then slows down after the NWs reach a length of approximately 0.8 μm. This is attributed to the combined axial growth contributions from the surface impingement and sidewall impingement together with the desorption of adatoms during the diffusion. The growth of InAs NWs on graphite was proposed following a vapour-solid mechanism. High-resolution transmission electron microscopy reveals that the NW has a mixture of pure zinc-blende and wurtzite insertions.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: SpringerOpen
ISSN: 1931-7573
Date of First Compliant Deposit: 15 June 2020
Date of Acceptance: 19 June 2014
Last Modified: 02 May 2023 18:33

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