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Pulse profiling active load pull measurements

Alimohammadi, Yashar, Kuwata, Eigo, Liu, Xuan, Husseini, Thoalfukar, Bell, James ORCID: https://orcid.org/0000-0002-4815-2199, Wu, Lei, Tasker, Paul ORCID: https://orcid.org/0000-0002-6760-7830 and Benedikt, Johannes ORCID: https://orcid.org/0000-0002-9583-2349 2020. Pulse profiling active load pull measurements. Presented at: IEEE/MTT-S International Microwave Symposium (IMS 2020), Los Angeles, CA, USA, 4-6 August 2020. 2020 IEEE/MTT-S International Microwave Symposium (IMS). IEEE, pp. 759-762. 10.1109/IMS30576.2020.9223989

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Abstract

An advanced active load-pull pulse profiling (ALPPP) system is presented to identify and track, for the first time, the optimum impedances along different sections of an RF pulse. Optimum impedance variations of a 10W GaN device within the RF pulse, and the resulting performance variations are quantified over an output power range of 25 dB showing a significant variation at power back-off. Furthermore, the nature of optimum load variations is probed through the addition of a pulsed IV capability. Pre-bias is utilized to investigate the impact of traps on device behavior over a range of temperature and drive power levels. It is demonstrated that pre-filling the traps provides for an almost constant load optimum across the RF pulse while maintaining device performance. Moreover, the identified optimum pre-bias condition, shows improved device linearity over the duration of the RF pulse, hence, suggesting a new method for compensating impedance mismatches and improving device linearity within an RF pulse.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 9781728168159
ISSN: 2576-7216
Last Modified: 09 Nov 2022 09:34
URI: https://orca.cardiff.ac.uk/id/eprint/136142

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