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Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Yi, Xin, Xie, Shiyu ORCID:, Liang, Baolai L., Lim, L.W., Huffaker, Diana L. ORCID:, Tan, Chee H. and David, John P. R. 2020. Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Presented at: SPIE Security + Defence, Virtual, UK, 21-25 Sept 2020. Proceedings Volume 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III. , vol.11540 UK: SPIE, 10.1117/12.2573766

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This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 μm. From these, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric field range of 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. Excess noise characteristics suggest an β/α ratio as low as 0.005 for an avalanche region of 1.5 μm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: SPIE
Date of First Compliant Deposit: 9 November 2020
Date of Acceptance: 13 October 2020
Last Modified: 09 Nov 2022 09:35

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