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Optimization of surface passivation for suppressing leakage current in GaSb PIN devices

Ji, Y., Azizur-Rahman, K. M. ORCID: https://orcid.org/0000-0002-9797-0382, Chang, T., Juang, B.-C., Prout, D. L., Liang, B., Huffaker, D. L. ORCID: https://orcid.org/0000-0001-5946-4481 and Chatziioannou, A. F. 2020. Optimization of surface passivation for suppressing leakage current in GaSb PIN devices. Electronics Letters 56 (25) , pp. 1420-1423. 10.1049/el.2020.2063
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Abstract

The suppression of leakage current via surface passivation plays a critical role for GaSb‐based optoelectronic devices. In this Letter the authors carefully optimise the sulfur passivation parameters for improving the performance of GaSb p–i–n devices. Two competing processes are evaluated during the sulfur passivation process: the hydrolysis of HS– ions that aide surface passivation and the re‐oxidation, respectively. Upon the optimisation of sulfur passivation parameters and subsequent encapsulation with atomic layer deposition Al2 O3, the surface resistivity significantly increased from 4.3 kΩ.cm to 28.6 kΩ.cm, leading to a 19.1 times drop in dark current at room temperature for the GaSb p–i–n structure. This Letter provides a repeatable and stable passivation approach for improving the optoelectronic performance of GaSb‐based devices.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Pharmacy
Publisher: Institution of Engineering and Technology (IET)
ISSN: 0013-5194
Date of First Compliant Deposit: 21 January 2021
Date of Acceptance: 3 November 2020
Last Modified: 25 Nov 2022 16:37
URI: https://orca.cardiff.ac.uk/id/eprint/137857

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