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Structural, optoelectronic, and photoelectrochemical investigation of CdSe NC's prepared by hot injection method

Barma, Sunil V., Rondiya, Sachin R., Jadhav, Yogesh A., Jathar, Sagar B., Rahane, Ganesh K., Rokade, Avinash, Cross, Russell W., Nasane, Mamta P., Jadkar, Vijaya, Dzade, Nelson Y. and Jadkar, Sandesh R. 2021. Structural, optoelectronic, and photoelectrochemical investigation of CdSe NC's prepared by hot injection method. ES Materials & Manufacturing 11 , pp. 50-56. 10.30919/esmm5f1040

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In this study, we report the synthesis and characterization of CdSe nanocrystals (NC's) by facile Hot injection (HI) method. The formation of CdSe NC's was confirmed by x-ray diffraction (XRD), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 600 nm in UV-Vis spectra corresponds to the band gap of ~ 2 eV favorable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating demonstrates a rise of photocurrent density (Jsc = 0.081 µAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-2, and recombination lifetime of 32.4 µs suggest the ideal behavior of CdSe NC's for device quality photoelectrodes.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Chemistry
Publisher: Engineered Science Publisher
ISSN: 2578-0611
Funders: EPSRC
Date of First Compliant Deposit: 10 February 2021
Date of Acceptance: 12 December 2020
Last Modified: 26 Oct 2021 01:07

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