Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V., Read, Dan ![]() ![]() |
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Abstract
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Additional Information: | Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). |
Publisher: | American Association for the Advancement of Science |
ISSN: | 2375-2548 |
Date of First Compliant Deposit: | 23 April 2021 |
Date of Acceptance: | 25 February 2021 |
Last Modified: | 02 May 2023 11:55 |
URI: | https://orca.cardiff.ac.uk/id/eprint/140745 |
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