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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Goswami, Aranya, Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V., Read, Dan ORCID:, Janotti, Anderson and Palmstrøm, Chris J. 2021. Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy. Science Advances 7 (16) , eabe8971. 10.1126/sciadv.abe8971

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Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Additional Information: Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).
Publisher: American Association for the Advancement of Science
ISSN: 2375-2548
Date of First Compliant Deposit: 23 April 2021
Date of Acceptance: 25 February 2021
Last Modified: 02 May 2023 11:55

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