Silicon-based single quantum dot emission in the telecoms C‑band

Orchard, Jonathan R., Woodhead, Chris ORCID: https://orcid.org/0000-0003-1342-0744, Wu, Jiang, Tang, Mingchu, Beanland, Richard, Noori, Yasir, Liu, Huiyun, Young, Robert J. and Mowbray, David J. 2017. Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics 4 (7) , pp. 1740-1746. 10.1021/acsphotonics.7b00276

PDF - Published Version Available under License Creative Commons Attribution. Download (3MB)

Abstract

We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	2330-4022
Date of First Compliant Deposit:	27 May 2021
Last Modified:	03 May 2023 18:28
URI:	https://orca.cardiff.ac.uk/id/eprint/141240

Citation Data

Cited 6 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item