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Silicon-based single quantum dot emission in the telecoms C‑band

Orchard, Jonathan R., Woodhead, Chris ORCID:, Wu, Jiang, Tang, Mingchu, Beanland, Richard, Noori, Yasir, Liu, Huiyun, Young, Robert J. and Mowbray, David J. 2017. Silicon-based single quantum dot emission in the telecoms C‑band. ACS Photonics 4 (7) , pp. 1740-1746. 10.1021/acsphotonics.7b00276

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We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530−1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 2330-4022
Date of First Compliant Deposit: 27 May 2021
Last Modified: 03 May 2023 18:28

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