Cripps, Steve ![]() |
Official URL: http://dx.doi.org/10.1109/MMM.2008.924789
Abstract
The article discusses the mechanism behind the Trapatt oscillator. This device is a p-n junction diode made from silicon which uses avalanche breakdown to generate oscillation and power at microwave frequencies. The Trapatt's forte was the generation of very short pulses of high microwave power at high efficiency.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 1527-3342 |
Last Modified: | 10 Nov 2022 09:46 |
URI: | https://orca.cardiff.ac.uk/id/eprint/144377 |
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