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Trapwave Inc. [Microwave Bytes]

Cripps, Steve ORCID: 2008. Trapwave Inc. [Microwave Bytes]. IEEE Microwave Magazine 9 (4) , pp. 46-51. 10.1109/MMM.2008.924789

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The article discusses the mechanism behind the Trapatt oscillator. This device is a p-n junction diode made from silicon which uses avalanche breakdown to generate oscillation and power at microwave frequencies. The Trapatt's forte was the generation of very short pulses of high microwave power at high efficiency.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 1527-3342
Last Modified: 10 Nov 2022 09:46

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