New formulation of Cardiff behavioral model including DC bias voltage dependence

Azad, Ehsan M., Bell, James J. ORCID: https://orcid.org/0000-0002-4815-2199, Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Moreno Rubio, Jorge J. ORCID: https://orcid.org/0000-0003-3376-4464 and Tasker, Paul J. ORCID: https://orcid.org/0000-0002-6760-7830 2022. New formulation of Cardiff behavioral model including DC bias voltage dependence. IEEE Microwave and Wireless Components Letters 32 (6) , pp. 607-610. 10.1109/LMWC.2022.3140653

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Abstract

A new mathematical formulation for the Cardiff nonlinear behavioral model is presented in this work which includes the dc bias voltages (drain and gate) into the model. It has been verified by modeling a GaN on SiC high electron mobility transistor (HEMT) at 3.5 GHz. For the case presented, interpolation of load-pull data has resulted in a more than 90% reduction in the density of the load-pull data required to generate a nonlinear behavioral model over a wide range of dc bias points.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	1531-1309
Date of First Compliant Deposit:	7 March 2022
Date of Acceptance:	24 December 2021
Last Modified:	23 Nov 2022 23:34
URI:	https://orca.cardiff.ac.uk/id/eprint/146916

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