K-band GaAs Doherty power amplifiers for microwave backhaul

Quaglia, Roberto ORCID: https://orcid.org/0000-0003-3228-301X, Ramella, Chiara, Piacibello, Anna, Camarchia, Vittorio and Pirola, Marco 2022. K-band GaAs Doherty power amplifiers for microwave backhaul. Presented at: 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff, Wales, 07-08 April 2022. 2022 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC). IEEE, pp. 1-3. 10.1109/INMMiC54248.2022.9762217

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Abstract

This paper presents the design and characterization of two Doherty power amplifiers for K-band applications implemented with Qorvo's 150 nm GaAs pHEMT technology. A 1 W module is developed first, and a 2 W amplifier is then obtained by combining on-chip two identical Doherty modules. The complete characterization of the two amplifiers demonstrates that the design approach, based on a matching combiner rather than a 50 Ω combiner, leads to very good combining efficiency with a relatively compact layout. The combined amplifier achieves, in the 23.2 GHz-25.2 GHz range, an output power in excess of 32 dBm, a remarkably high power for a GaAs Doherty MMIC amplifier at these frequencies. The small-signal gain is around 10 dB, while the power-added efficiency is higher than 24% and 19% at maximum power and at 6 dB back-off, respectively, over the whole frequency range.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	IEEE
ISBN:	9781665478458
Last Modified:	10 Nov 2022 11:22
URI:	https://orca.cardiff.ac.uk/id/eprint/150253

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