Mahoney, Joe, Tang, Mingchu, Liu, Huiyun and Abadia, Nicolas ![]() ![]() |
Preview |
PDF
- Published Version
Available under License Creative Commons Attribution. Download (3MB) | Preview |
Abstract
he quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the doped QD barriers lead to a better figure of merit (FoM), defined as the ratio of the change in absorption Δα for a reverse bias voltage swing to the loss at 1 V α(1 V), FoM=Δα/α (1 V). The improved performance is due to the absence of the ground-state absorption peak and an additional component to the Stark shift. Measurements indicate that p-doping the QD barriers can lead to more than a 3x increase in FoM modulator performance between temperatures of −73 °C to 100 °C when compared with the stack with NID QD barriers.
Item Type: | Article |
---|---|
Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | Optica |
ISSN: | 1094-4087 |
Date of First Compliant Deposit: | 7 June 2022 |
Date of Acceptance: | 30 March 2022 |
Last Modified: | 30 Nov 2022 07:57 |
URI: | https://orca.cardiff.ac.uk/id/eprint/150270 |
Citation Data
Cited 1 time in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
![]() |
Edit Item |