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Theoretical analysis and modelling of degradation for III–V lasers on Si

Liu, Jianzhuo, Tang, Mingchu, Deng, Huiwen, Shutts, Samuel ORCID:, Wang, Lingfang, Smowton, Peter M. ORCID:, Jin, Chaoyuan, Chen, Siming, Seeds, Alywn and Liu, Huiyun 2022. Theoretical analysis and modelling of degradation for III–V lasers on Si. Journal of Physics D: Applied Physics 55 (40) , 404006. 10.1088/1361-6463/ac83d3

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Abstract: InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the performance of such a laser device in terms of device lifetime. Here, we proposed a kinetic model including a degradation term and a saturation term to simulate the degradation process caused by the TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, is calculated. We compared the rate of degradation of QD lasers with different cavity lengths and of quantum-well lasers, where both are directly grown on Si substrates, by varying the fitting parameters in the calculation of current densities in the kinetic model.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Additional Information: License information from Publisher: LICENSE 1: URL:, Type: cc-by
Publisher: IOP Publishing
ISSN: 0022-3727
Date of First Compliant Deposit: 5 August 2022
Date of Acceptance: 25 July 2022
Last Modified: 02 May 2023 17:17

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