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Active region doping strategies in O-band InAs/GaAs quantum-dot lasers

Jarvis, Lydia K., Maglio, Ben, Shutts, Samuel ORCID:, Li, Zhibo ORCID:, Deng, Huiwen, Tang, Mingchu, Liu, Huiyun and Smowton, Peter ORCID: 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022, 22-27 January 2022. Proceedings of SPIE. Society of Photo-optical Instrumentation Engineers, 10.1117/12.2614632

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The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies are investigated in a temperature range 17 °C – 97 °C. We demonstrate lasers with a reduced threshold current using direct n-doping (during the dot formation) in the active region compared lasers with a nominally undoped active region. We explain results using calculations of the dot and wetting layer potentials and the electron and hole energy levels.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: Society of Photo-optical Instrumentation Engineers
ISSN: 0277-786X
Date of Acceptance: 9 March 2022
Last Modified: 05 Jan 2024 07:55

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