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GaAs X-band high efficiency (65%) broadband (30%) amplifier MMIC based on the Class B to Class J continuum

Powell, J. R., Uren, Michael John, Martin, T., McLachlan, A., Tasker, Paul J. ORCID:, Bell, James Joseph ORCID:, Saini, Randeep, Woodington, Simon Philip, Benedikt, Johannes ORCID: and Cripps, Stephen Charles ORCID: 2011. GaAs X-band high efficiency (65%) broadband (30%) amplifier MMIC based on the Class B to Class J continuum. Presented at: 2011 IEEE/MTT-S International Microwave Symposium, Baltimore, MD, USA, 5-10 June 2011. Published in: Seigel, Peter, Remley, Kate, Tzuang, C. and Ponchak, George eds. 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011. New York: IEEE, p. 355. 10.1109/MWSYM.2011.5973350

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The Class B to Class J continuum of modes, exploited here, offers Class B levels of efficiency over a continuum of impedance matching conditions, making wider bandwidth designs more feasible compared to resonant harmonically tuned approaches. Circuits were designed to systematically use the continuum of modes for the first time at X-band. A 0.5 W MMIC fabricated using a GaAs pHEMT process yields above 65% drain efficiency over 30% bandwidth.

Item Type: Conference or Workshop Item (Paper)
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Additional Information: TU3G: Efficient Broadband Power Amplifiers
Publisher: IEEE
ISBN: 9781612847542
ISSN: 0149-645X
Last Modified: 18 Oct 2022 13:50

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