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Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements

Mashad Nemati, Hossein, Clarke, Alan Leslie, Cripps, Stephen Charles ORCID:, Benedikt, Johannes ORCID:, Tasker, Paul J. ORCID:, Fager, Christian, Grahn, Jan and Zirath, Herbert 2010. Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements. Presented at: IEEE MTT 2010 International Microwave Symposium, Anaheim, CA, USA, 23-28 May 2010. 2010 IEEE MTT-S International Microwave Symposium Digest (MTT 2010). Piscataway, NJ: IEEE, pp. 509-512. 10.1109/MWSYM.2010.5517696

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In this paper, the efficiency of a GaN HEMT transistor and its intrinsic waveforms are measured at 0.9 GHz and investigated for load- and supply-modulation applications. The results show that both techniques perform equally well for back-off levels ≤ 6.5 dB. At higher back-off levels, the efficiency improvements achieved by supply modulation outperform load modulation. At 10 dB back-off, supply, and load modulation provide a power-added efficiency (PAE) of 68%, and 58%, respectively. Using measured intrinsic waveforms, it is shown that PAE degradations in load modulation can be mainly attributed to parallel losses rather than series losses, which are dominant in supply modulation. The harmonic contents of the intrinsic waveforms, in both techniques, are equally strong in back-off and peak power operations. There is, therefore, a great potential for further efficiency enhancement by circuit-level optimization of harmonic terminations for back-off.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Uncontrolled Keywords: Efficiency; GaN HEMT; load modulation; power amplifier; supply modulation
Publisher: IEEE
ISBN: 9781424460564
Last Modified: 18 Oct 2022 13:50

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