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Gain in p-doped quantum dot lasers

Smowton, Peter Michael ORCID:, Sandall, Ian C., Hopkinson, M. and Liu, H.-Y. 2007. Gain in p-doped quantum dot lasers. Journal of Applied Physics 101 (1) , 01310701-01310707. 10.1063/1.2405738

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We directly measure the gain and threshold characteristics of three quantum dot laser structures that are identical except for the level of modulation doping. The maximum modal gain increases at fixed quasi-Fermi level separation as the nominal number of acceptors increases from 0 to 15 to 50 per dot. These results are consistent with a simple model where the available electrons and holes are distributed over the dot, wetting layer, and quantum well states according to Fermi-Dirac statistics. The nonradiative recombination rate at fixed quasi-Fermi level separation is also higher for the p-doped samples leading to little increase in the gain that can be achieved at a fixed current density. However, we demonstrate that in other similar samples, where the difference in the measured nonradiative recombination is less pronounced, p doping can lead to a higher modal gain at a fixed current density.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QB Astronomy
Q Science > QC Physics
Additional Information: ------- Publisher's copyright requirements "Copyright (2004) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Tian, Y and Li, G and Shinar, J and Wang, N. L. and Cook, B A and Anderegg, J. W. and Constant, A. P. and Russell, A M and Snyder, John Evan (2004) Electrical transport in amorphous semiconducting AlMgB14 films. Applied Physics Letters , 85 (7). pp. 1181-1183. ISSN 10773118 (10.1063/1.1781738)and may be found at"
ISSN: 0021-8979
Last Modified: 11 May 2023 23:02

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