Reducing the oxygen vacancy concentration in SrTiO3-δ thin films via an optimized O2 plasma treatment for enhancing device properties

Kim, Ji-Yeop, Jin, Mi-Jin, Hou, Bo ORCID: https://orcid.org/0000-0001-9918-8223, Kim, Minsoo P., Um, Doo-Seung and Kim, Chang-Il 2023. Reducing the oxygen vacancy concentration in SrTiO3-δ thin films via an optimized O2 plasma treatment for enhancing device properties. Applied Surface Science 639 , 158271. 10.1016/j.apsusc.2023.158271 Item availability restricted.

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Abstract

Perovskite materials, specifically strontium titanate (SrTiO3, STO) thin films, have gained significant attention in materials science and electronics owing to their unique properties. However, low-temperature fabrication via sputtering can introduce oxygen vacancies that compromise film quality. O2 plasma treatment (OPT) has the potential to improve film properties, such as bond recomposition, electrical conductivity, and optical properties, by reducing the number of oxygen vacancies. In this study, STO films treated by O2 plasma were characterized using analytical techniques to understand the OPT-induced microstructural, morphological, and optical changes in these films. In addition, the possibility of improving device properties by low-temperature processes was confirmed by exploring the correlation between the number of oxygen vacancies reduced by the OPT process and the enhanced film properties. This result is expected to promote the application of STO thin films in flexible electronic devices and display components and provides insights into the role of oxygen vacancies and the effectiveness of OPT as a low-temperature solution for reducing their number.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Elsevier
ISSN:	0169-4332
Date of First Compliant Deposit:	23 August 2023
Date of Acceptance:	15 August 2023
Last Modified:	17 Nov 2023 11:20
URI:	https://orca.cardiff.ac.uk/id/eprint/162013

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