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Overcoming the compensation of acceptors in GaN:Mg by defect complex formation

Xie, Zijuan, Buckeridge, John, Catlow, C. Richard. A ORCID:, Zhang, Anping, Keal, Thomas W., Sherwood, Paul, Lu, You, Woodley, Scott M. and Sokol, Alexey A. 2023. Overcoming the compensation of acceptors in GaN:Mg by defect complex formation. APL Materials 11 (8) , 080701. 10.1063/5.0148858

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In GaN:Mg, the MgGa acceptor is compensated extensively by the formation of nitrogen vacancies (VN) and Mg interstitials (Mgi). However, we show that such compensation can be overcome by forming two kinds of Mg-rich complexes: one that contains VN and the other that contains only MgGa and Mgi. Such complexing not only neutralizes VN and Mgi but also forms better complex acceptors that have lower formation energies and smaller hole localization energies than isolated MgGa. Our results help explain the different doping behaviors in samples grown by different methods.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Chemistry
Cardiff Catalysis Institute (CCI)
Publisher: American Institute of Physics
ISSN: 2166-532X
Funders: Materials Chemistry High End Computing Consortium funded by EPSRC
Date of First Compliant Deposit: 20 September 2023
Date of Acceptance: 12 July 2023
Last Modified: 22 Sep 2023 20:05

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